SI2302DS,215
Manufacturer:
Nxp Semiconductors
Mfr.Part #:
SI2302DS,215
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel 830 mW 20 V Continuous Drain Current (ID):2.5 A 10 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Non-Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Obsolete (Last Updated: 4 days ago) |
| Max Power Dissipation | 830 mW |
| Power Dissipation | 830 mW |
| Threshold Voltage | 650 mV |
| Input capacitance | 230 pF |
| Continuous Drain Current (ID) | 2.5 A |
| Rds On Max | 85 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Rise Time | 23 ns |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 56 mΩ |
| Max Dual Supply Voltage | 20 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| FET Type(Transistor Polarity) | N-Channel |
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